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UTT40N08L-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали UTT40N08L-TN3-R
подробное описание детали  N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT40N08L-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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UTT40N08
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-A81.a
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
40
A
Pulsed (Note 1)
IDM
160
A
Power Dissipation
TC=25°C
PD
65
W
TC=125°C
1.92
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
°C/W
Junction to Case
θJC
1.92
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
80
V
Drain-Source Leakage Current
IDSS
VDS =80 V, VGS =0 V, TJ=25°C
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V
+100
nA
Reverse
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
35
45
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25 V, VGS =0V, f=1.0MHz
2800
pF
Output Capacitance
COSS
320
pF
Reverse Transfer Capacitance
CRSS
140
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =25V, VGS =10 V, ID =40A
200
nC
Gate to Source Charge
QGS
19
nC
Gate to Drain Charge
QGD
14
nC
Turn-ON Delay Time
tD(ON)
VDS =30 V, ID=1 A, VGS =10V,
RG =1.7 Ω
66
78
ns
Rise Time
tR
52
70
ns
Turn-OFF Delay Time
tD(OFF)
350 380
ns
Fall-Time
tF
90
110
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
VD=VG=0V , VS=1.3V
40
A
Maximum Body-Diode Pulsed Current
ISM
160
A
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=40A, VGS=0V
1.3
V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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