поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

UT2035ZG-AE3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали UT2035ZG-AE3-R
подробное описание детали  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2035ZG-AE3-R датащи(HTML) 2 Page - Unisonic Technologies

  UT2035ZG-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2035ZG-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2035ZG-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
UT2035Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-937.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current
Continuous (Note 2)
Steady, TA=25°C
ID
-3.6
A
State, TA=70°C
-2.9
A
Pulsed (Note 3)
IDM
-24
A
Power Dissipation (Note 2)
PD
0.81
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t≤10s.
3. Repetitive rating, pulse width limited by junction temperature.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
153.5
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-20
V
Drain-Source Leakage Current
IDSS
VDS=-20V, VGS=0V
-1.0
µA
Gate-Source
Leakage Current
Forward
IGSS
VGS=+8V, VDS=0V
+10
µA
Reverse
VGS=-8V, VDS=0V
-10
µA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-0.4 -0.7 -1.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-4.0A
30
42
mΩ
VGS=-2.5V, ID=-4.0A
50
65
mΩ
VGS=-1.8V, ID=-2.0A
61
82
mΩ
Forward Transfer Admittance
|YFS|
VDS=-5V, ID=-4A
14
S
Diode Forward Voltage
VSD
VGS=0V, IS=-1A
-0.7 -1.0
V
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-10V, f=1.0MHz
1610
pF
Output Capacitance
COSS
157
pF
Reverse Transfer Capacitance
CRSS
145
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-4.5V, VDS=-10V, ID=-4A
15.4
nC
Gate to Source Charge
QGS
2.5
nC
Gate to Drain Charge
QGD
3.3
nC
Gate Resistance
RG
VDS=0V, VGS=0V, f=1MHz
9.45
Ω
Turn-ON Delay Time
tD(ON)
VDS=-10V, VGS=-4.5V,ID=-1A,
RG=6.0Ω, RL=10Ω
16.8
ns
Rise Time
tR
12.4
ns
Turn-OFF Delay Time
tD(OFF)
94.1
ns
Fall-Time
tF
42.4
ns
Note: Short duration pulse test used to minimize self-heating effect.



Html Pages

1 2 3


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com