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18T10G-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали 18T10G-TN3-R
подробное описание детали  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
PDF  3 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

18T10G-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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18T10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
VGS @ 10V
TC=25°C
ID
9
A
TC=100°C
5.6
A
Pulsed (Note 1)
IDM
30
A
Total Power Dissipation
TC=25°C
PD
27.8
W
TA=25°C
1.3
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Junction to Case
θJC
4.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
25
µA
VDS=80V, VGS=0V, TJ=125°C
250
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
(Note 3)
RDS(ON)
VGS=10V, ID=5A
160 mΩ
VGS=4.5V, ID=1A
440 mΩ
Forward Transconductance
gFS
VDS=10V, ID=5A
5
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
400
640
pF
Output Capacitance
COSS
55
pF
Reverse Transfer Capacitance
CRSS
35
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
QG
VGS=4.5V, VDS=80V, ID=5A
23
50
nC
Gate to Source Charge
QGS
5.25
nC
Gate to Drain ("Miller") Charge
QGD
5.5
nC
Turn-ON Delay Time (Note 3)
tD(ON)
VDS=30V, ID=0.5A, RG=25Ω,
VGS=10V
33
ns
Rise Time
tR
28
ns
Turn-OFF Delay Time
tD(OFF)
160
ns
Fall-Time
tF
45
ns
SOURCE- DRAIN DIODE
Forward On Voltage (Note 3)
VSD
IS=5A, VGS=0V
1.3
V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse test.



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