2N60KG-TND-R datasheet(1/7 Pages) UTC

1 / 7 page

UNISONIC TECHNOLOGIES CO., LTD

2N60K-MT

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-B03.F

2A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 2N60K-MT is a high voltage power MOSFET and

is designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is

usually used at high speed switching applications in power

supplies, PWM motor controls, high efficient DC to DC

converters and bridge circuits.



FEATURES

* RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

Аналогичный номер детали - 2N60KG-TND-R

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	2N60KG-TND-R	242Kb / 7P	N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	FQA70N15	738Kb / 8P	N-Channel Power MOSFET
	FQA90N15	749Kb / 8P	N-Channel Power MOSFET
	SSF7N90A	249Kb / 8P	N-CHANNEL POWER MOSFET
	FQH90N15	1Mb / 10P	N-Channel Power MOSFET
Gunter Seniconductor Gm...	GFC224	100Kb / 1P	N Channel Power MOSFET
	GFC250	114Kb / 1P	N Channel Power MOSFET
	GFC254	114Kb / 1P	N Channel Power MOSFET
	GFC330	98Kb / 1P	N Channel Power MOSFET
ON Semiconductor	EMH2412-TL-H	550Kb / 7P	N-Channel Power MOSFET July, 2013
AiT Semiconductor Inc.	BSS123L	486Kb / 5P	MOSFET N-CHANNEL POWER MOSFET REV1.0