UTT25P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-595.E

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

Continuous

±15

V

±20

V

Drain Current

-27.5

A

-80

A

Power Dissipation

TO-220/TO-220F

2

W

TO-251/TO-252

1.25

W

Junction Temperature

+175

°C

Storage Temperature

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. When surface mounted to an FR4 board using 1" pad size (Cu Area 1.127 in

3. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

62.5

°C/W

TO-251/TO-252

100

°C/W

Junction to Case

TO-220

1.2

°C/W

TO-220F

4.5

°C/W

TO-251/TO-252

2.5

°C/W