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UF9640G-TQ2-R датащи(PDF) 5 Page - Unisonic Technologies

номер детали UF9640G-TQ2-R
подробное описание детали  P-CHANNEL POWER MOSFET
PDF  8 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF9640G-TQ2-R датащи(HTML) 5 Page - Unisonic Technologies

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UF9640
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
5 of 8
www.unisonic.com.tw
QW-R502-484.E
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250µA
-200
V
Breakdown Voltage Temp. Coefficient
∆V(BR)DSS/∆TJ
ID=-1mA,
Referenced to 25°C
-0.20
V/°C
Drain-Source Leakage Current
IDSS
VDS=-200V, VGS=0V
-100
µA
Forward
VGS=+20V
+100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-6.6A (Note 4)
0.50
Ω
Forward Transconductance
gFS
VDS=-50V, ID=-6.6A (Note 4)
4.1
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1200
pF
Output Capacitance
COSS
370
pF
Reverse Transfer Capacitance
CRSS
81
pF
Internal Source Inductance
LS
VDS=-25V,VGS=0V,f=1.0MHz
7.5
nH
SWITCHING PARAMETERS
Total Gate Charge
QG
44
nC
Gate-Source Charge
QGS
7.1
nC
Gate-Drain Charge
QGD
VDS=-160V, VGS=-10V,
ID=-11A (Note4)
27
nC
Turn-ON Delay Time
tD(ON)
14
ns
Turn-ON Rise Time
tR
43
ns
Turn-OFF Delay Time
tD(OFF)
39
ns
Turn-OFF Fall Time
tF
VDD=-100V,ID=-11A,RG=9.1Ω,
RD=8.6Ω (Note 4)
38
ns
Internal Drain Inductance
LD
Between lead, 6mm (0.25in.)
from package and center of
die contact
4.5
nH
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-11
A
Maximum Body-Diode Pulsed Current
ISM
-44
A
Drain-Source Diode Forward Voltage
VSD
IS =-11A, VGS=0V, TJ=25°C
-5.0
V
Body Diode Reverse Recovery Time
tRR
250
300
ns
Body Diode Reverse Recovery Charge
QRR
IF=-11A, TJ=25°C
dI/dt=100A/μs (Note 4)
2.9
3.6
μC
Forward Turn-On Time
tON
Intrinsic turn-on time is neglegibal (turn-on is dominated
by LS+LD)
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. VDD=-50V, Starting TJ=25°C, L=8.7mH, RG=25Ω, IAS=-11A
3. ISD ≤-11A, di/dt ≤150A/μs, VDD ≤BVDSS, Starting TJ=150°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%



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