UF640G-T2Q-R datasheet(4/6 Pages) UTC

4 / 6 page

UF640

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-066.I



ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250μA, VGS=0V

200

Drain-Source Leakage Current

IDSS

VDS = Rated BVDSS, VGS = 0V

μA

Gate-Source Leakage Current

IGSS

VGS= ±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(THR) VGS=VDS, ID=250μA

Drain-Source On Resistance

RDS(ON)

VGS=10V, ID=10A

0.14

0.18

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

805

Output Capacitance

COSS

240

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1MHz

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

127

152

Turn-OFF Fall-Time

VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω,

MOSFET Switching Times are

Essentially Independent of Operating

Temperature

104

Total Gate Charge

QG(TOT)

110

Gate Source Charge

QGS

Gate Drain Charge

QGD

VGS=10V, ID≈18A, VDS=0.8 x Rated

BVDSS Gate Charge is Essentially

Independent of Operating

Temperature IG(REF) = 1.5mA

SOURCE TO DRAIN DIODE SPECIFICATIONS

Diode Forward Voltage (Note)

VSD

TJ=25°C, IS=18A, VGS=0V,

2.0

Continuous Source Current

(body diode)

Pulse Source Current (body diode)

(Note)

ISM

Integral Reverse p-n Junction

Diode in the MOSFET

Gate

Sourse

Drain

Reverse Recovery Time

trr

TJ=25°C, IS=18A, dIS/dt=100A/μs

120

240

530

Reverse Recovery Charge

QRR

TJ=25°C, IS=18A, dIS/dt=100A/μs

1.3

2.8

5.6

μC

Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%.

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