19N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-261.J



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

± 25

V

15.6

A

Continuous Drain Current

9.8

A

Pulsed Drain Current (Note 2)

62.4

A

Avalanche Current (Note 2)

15.6

A

Single Pulsed Avalanche Energy (Note 3)

220

mJ

Repetitive Avalanche Energy (Note 2)

5.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6.0

V/ns

TO-220/TO-263

62.5

W

TO-220F/TO-220F1

38

W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252

50

W

Power Dissipation

TO-3P

178

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-263

62.5

°C/W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252

50

°C/W

Junction to Ambient

TO-3P

40

°C/W

TO-220/TO-263

2.0

°C/W

TO-220F/TO-220F1

3.95

°C/W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252

2.5

°C/W

Junction to Case

TO-3P

0.7

°C/W