UF640

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-066.I



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

200

V

200

V

Gate-Source Voltage

±20

V

Continuous Drain Current

18

A

Pulsed Drain Current (Note 2)

72

A

Single Pulse Avalanche Energy Rating (Note 2)

242

mJ

SOT-223

66

TO-220

123

TO-220F

40

TO-220F1/TO-220F2

42

TO-252

83

Maximum Power

Dissipation

TO-262/TO-263

139

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-223

57

TO-220/TO-220F

TO-220F1/TO-220F2

TO-262/TO-263

62.5

Junction to Ambient

TO-252

110

°C/W

SOT-223

1.8

TO-220

1.01

TO-220F

3.1

TO-220F1/TO-220F2

2.9

TO-252

1.5

Junction to Case

TO-262/TO-263

0.9

°C/W