TC4426 datasheet(2/9 Pages) MICROCHIP

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1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4426

TC4427

TC4428

DS21422A

TC4426/7/8-8

10/21/96

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +22V

Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)

Maximum Chip Temperature ................................. +150

°C

Storage Temperature Range ................ – 65

°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

Package Thermal Resistance

CerDIP RθJ-A ................................................ 150°C/W

CerDIP RθJ-C .................................................. 50°C/W

PDIP RθJ-A ................................................... 125°C/W

PDIP RθJ-C ..................................................... 42°C/W

SOIC RθJ-A ................................................... 155°C/W

SOIC RθJ-C ..................................................... 45°C/W

Operating Temperature Range

C Version ............................................... 0

°C to +70°C

E Version .......................................... – 40

°C to +85°C

M Version ....................................... – 55

°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic ............................................................. 730mW

CerDIP ............................................................800mW

SOIC ...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 High Input Voltage

2.4

—

VIL

Logic 0 Low Input Voltage

—

0.8

IIN

Input Current

≤ V

– 1

—

µA

Output

VOH

High Output Voltage

VDD – 0.025

—

VOL

Low Output Voltage

—

0.025

Output Resistance

VDD = 18V, IO = 10mA

—

Ω

IPK

Peak Output Current

Duty Cycle

≤ 2%, t ≤ 30µsec

—

1.5

—

IREV

Latch-Up Protection

Duty Cycle

≤ 2%

> 0.5

—

Withstand Reverse Current

≤ 30 µsec

Switching Time (Note 1)

Rise Time

Figure 1

—

nsec

Fall Time

Figure 1

—

nsec

tD1

Delay Time

Figure 1

—

nsec

tD2

Delay Time

Figure 1

—

nsec

Power Supply

Power Supply Current

VIN = 3V (Both Inputs)

—

4.5

VIN = 0V (Both Inputs)

—

0.4

NOTE: 1. Switching times are guaranteed by design.

PIN CONFIGURATIONS

TC4426

OUT A

OUT B

IN A

GND

IN B

VDD

NC = NO INTERNAL CONNECTION

TC4427

OUT A

OUT B

IN A

GND

IN B

TC4428

OUT A

OUT B

IN A

GND

IN B

2,4

7,5

INVERTING

2,4

7,5

NONINVERTING

VDD

DIFFERENTIAL

VDD

NOTE: SOIC pinout is identical to DIP.

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