PESDXS4UD_SER_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 21 August 2009

5 of 12

NXP Semiconductors

PESDxS4UD series

Quadruple ESD protection diode arrays in a SOT457 package

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1, 3, 4 or 6 to 2 or 5

diode capacitance

PESD3V3S4UD

-

215

300

pF

PESD5V0S4UD

-

165

220

pF

PESD12VS4UD

-

73

100

pF

PESD15VS4UD

-

60

90

pF

PESD24VS4UD

-

45

70

pF

clamping voltage

[1][2]

PESD3V3S4UD

--8

V

--12

V

PESD5V0S4UD

--8

V

--13

V

PESD12VS4UD

--17

V

--24

V

PESD15VS4UD

--22

V

--33

V

PESD24VS4UD

--33

V

--52

V

differential resistance

--25

Ω

Table 8.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 3.

Peak pulse power as a function of exponential

pulse duration; typical values

Fig 4.

Relative variation of peak pulse power as a

function of junction temperature; typical

values

006aaa698

10

10

(W)

1

0

200

150

50

100

001aaa633

0.4

0.8

1.2

0