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TC2117 датащи(PDF) 6 Page - Microchip Technology |
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TC2117 датащи(HTML) 6 Page - Microchip Technology |
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6 / 12 page ![]() TC2117 DS21665B-page 6 © 2002 Microchip Technology Inc. 4.0 TYPICAL CHARACTERISTICS Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Output Noise vs. Frequency FREQUENCY (kHz) 10.0 1.0 0.01 0.01 1 10 100 1000 0.1 0.0 0.020 0.018 0.016 0.012 0.010 0.008 0.006 0.004 0.002 0.000 0.014 TEMPERATURE ( °C) Line Regulation vs. Temperature -40 °C 0 °C 0.0100 0.0090 0.0080 0.0070 0.0060 0.0050 0.0040 0.0030 0.0020 0.0010 0.0100 TEMPERATURE (°C) Load Regulation vs. Temperature 1mA to 800mA VOUT = 3V VIN = 3.5V to 6.0V VOUT = 2.5V IOUT = 0.1mA CIN = 1µF C = 1 µF OUT V = 6.0V IN V = 5V OUT I = 100mA OUT -40 °C 0°C 25 °C 70 °C 85 °C 125°C 25 °C 70 °C 85°C 125°C 0.600 0.550 0.500 0.450 0.400 0.350 0.300 0.250 0.200 0.150 0.100 0.050 0.000 0 100 200 300 400 500 600 700 800 ILOAD (mA) Dropout Voltage vs. ILOAD TEMPERATURE (°C) 3.030 3.020 3.010 3.000 2.990 2.980 2.970 2.960 2.950 2.940 2.930 2.920 3.0V VOUT vs. Temperature 150 135 120 105 90 75 60 45 30 15 0 IDD vs. Temperature 85 °C 125 °C -40 °C 0 °C 25 °C 70 °C ILOAD= 0.1mA ILOAD= 300mA ILOAD = 500mA ILOAD = 800mA VOUT = 2.5V VOUT = 5V VOUT = 3V VIN = VOUT +1V IOUT = 0.1mA -40 °C 0°C 25 °C 70 °C 85 °C 125°C TEMPERATURE (°C) -40 °C 0°C 25 °C 70 °C 85 °C 125°C Power Supply Rejection Ratio FREQUENCY (Hz) -70 -60 -50 -40 -30 -20 -10 10 100 1k 10k 100k 1M VOUT IOUT = 300mA VIN = 4.0V to 5.0V COUT = 10µF Tantalum (0.25Ω ESR) CIN = NA Line Step Response VIN = 4.0V VOUT = 3.0V CIN = 1µF Ceramic COUT = 10µF Tantalum (0.25Ω ESR) IOUT = 6mA to 600mA Load Step Response VINDC = 4V IINAC = 50mVp-p VOUTDC = 3V IOUT = 60mA COUT = 10 µF Tantalum 50mV/DIV 600mA/DIV 50mV/DIV |
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