2001 Feb 05

2

NXP Semiconductors

Product specification

MMIC variable gain amplifier

BGA2031/1

FEATURES

 High gain

 Excellent adjacent channel power rejection

 Small SMD package

 Low dissipation.

APPLICATIONS

 General purpose variable gain amplifier for low voltage

and medium power

 Driver for power amplifiers in systems that require good

linearity, such as CDMA, both cellular band (850 MHz)

and PCS (1.9 GHz). This is because of the high output

power and good linearity.

DESCRIPTION

Silicon Monolitic Microwave Integrated Circuit (MMIC)

2 stage variable gain amplifier in double polysilicon

technology in a 6-pin SOT363 SMD plastic package for low

voltage medium power applications.

PINNING

PIN

DESCRIPTION

1RFin

2CTRL

5GND

6GND

handbook, halfpage

MAM440

RFin

VS2+RFout

VS1

CTRL

GND

Top view

BIAS

CIRCUIT

12

3

65

4

Fig.1 Simplified outline (SOT363) and symbol.

Marking code: A3



QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

supply voltage

3

3.3

V

supply voltage

3

3.3

V

supply current; pins 3 and 4

0

10

A

51

63

mA

30

37

mA

load power

at 1 dB gain compression point;

f= 1.9GHz

13



dBm

ACPR

adjacent channel power rejection

49



dBc

48



dBc

power gain

23



dB

24



dB

G

gain control range

62



dB

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling.