NX3008CBKV

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Product data sheet

Rev. 1 — 29 July 2011

4 of 21

NXP Semiconductors

NX3008CBKV

30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET

Fig 1.

Normalized total power dissipation as a

function of junction temperature

Fig 2.

Normalized continuous drain current as a

function of junction temperature

Fig 3.

Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

-75

175

125

25

75

-25

001aao121

40

80

120

(%)

0

-75

175

125

25

75

-25

001aao122

40

80

120

(%)

0

001aao252

10

1

1

10

(A)

(1)

(2)

(3)

(4)

(5)