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PIC16C925T-S/CL датащи(PDF) 141 Page - Microchip Technology |
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PIC16C925T-S/CL датащи(HTML) 141 Page - Microchip Technology |
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141 / 182 page ![]() 2001 Microchip Technology Inc. Preliminary DS39544A-page 139 PIC16C925/926 15.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Ambient temperature under bias............................................................................................................. -55°C to +125°C Storage temperature .............................................................................................................................. -65°C to +150°C Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) ......................................... -0.3V to (VDD + 0.3V) Voltage on VDD with respect to VSS ............................................................................................................. 0V to +7.5V Voltage on MCLR with respect to VSS........................................................................................................ 0V to +13.25V Voltage on RA4 with respect to VSS............................................................................................................... 0V to +8.5V Voltage on VLCD2, VLCD3 with respect to VSS.............................................................................................. 0V to +10V Total power dissipation (Note 1) .............................................................................................................................. 1.0 W Maximum current out of VSS pin ........................................................................................................................... 300 mA Maximum current into VDD pin .............................................................................................................................. 250 mA Input clamp current, IIK (VI < 0 or VI > VDD) ..................................................................................................................... ± 20 mA Output clamp current, IOK (VO < 0 or VO > VDD) ............................................................................................................. ± 20 mA Maximum output current sunk by any I/O pin ......................................................................................................... 25 mA Maximum output current sourced by any I/O pin ................................................................................................... 25 mA Maximum current sunk by all Ports combined ..................................................................................................... 200 mA Maximum current sourced by all Ports combined ................................................................................................ 200 mA Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD - ∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL) † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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