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UMT1NG-AL6-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали UMT1NG-AL6-R
подробное описание детали  GENERAL PURPOSE TRANSISTOR
PDF  3 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UMT1NG-AL6-R датащи(HTML) 2 Page - Unisonic Technologies

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UMT1N
Preliminary
DUAL TRANSISTOR
www.unisonic.com.tw
2 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
VER.A
ABSOLUTE MAXIMUM RATINGS (T
A=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-0.15
A (DC)
Collector Power Dissipation
Pc
0.15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-50µA
-60
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA
-50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-50µA
-6
V
Collector CutOff Current
ICBO
VCB=-60V
-0.1
µA
Emitter CutOff Current
IEBO
VEB=-6V
-0.1
µA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC/IB=-50mA/-5mA
-0.5
V
DC Current Transfer Ratio
hFE
VCE=-6V, IC=-1mA
120
560
Transition Frequency
fT
VCE=-12V, IE=2mA, f=100MHz
140
MHz
Output Capacitance
Cob
VCB=-12V, IE=0A, f=1MHz
4
5
pF



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