UT3419G-AE3-R datasheet(2/4 Pages) UTC

номер детали	UT3419G-AE3-R

подробное описание детали	ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

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производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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UT3419

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-391.F



ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

-20

Gate to Source Voltage

VGSS

±12

Continuous Drain Current (Note 1)

TA =25°C

-3.5

TA =70°C

-2.8

Pulsed Drain Current (Note 2)

IDM

-15

Total Power Dissipation (Note 1)

TA =25°C

1.4

TA =70°C

0.9

Junction Temperature

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

t ≤ 10s

θJA

°C/W

Steady-State

125

°C/W

Notes: 1. The value of θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C. The value in any a given application depends on the user's specific board

design. The current rating is based on the t ≤ 10s thermal resistance rating.

2. Repetitive rating, pulse width limited by junction temperature.

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