UT3416G-AE2-R datasheet(1/3 Pages) UTC

номер детали	UT3416G-AE2-R

подробное описание детали	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

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производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3416

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-325.E

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UTC UT3416 is advanced n-channel enhancement

MOSFET which can provide the designer with the best combination

of excellent RDS (ON), low gate charge and low gate voltages as low

as 1.8V.When it is used as a load switch or in PWM application, the

UTC UT3416 can be considered as an ideal.



FEATURES

* VDS =20 V

* ID =6.5 A

* RDS(ON)<22 mΩ @ VGS=4.5V, ID =6.5A



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3416G-AE2-R

SOT-23-3

S

G

D

Tape Reel

UT3416G-AE3-R

SOT-23

S

G

D

Tape Reel



MARKING

34SG

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производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	UT3416G-AE2-R	240Kb / 5P	N-CHANNEL MOSFET

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UT3416G-AE2-R датащи(PDF) 1 Page - Unisonic Technologies

UT3416G-AE2-R датащи(HTML) 1 Page - Unisonic Technologies

Аналогичный номер детали - UT3416G-AE2-R

Аналогичное описание - UT3416G-AE2-R

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