TF218

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-093.F



PARAMETER

SYMBOL

RATINGS

UNIT

Gate to Drain Voltage

-20

V

Gate Current

10

mA

Drain Current

1

mA

Power Dissipation

100

mW

Junction Temperature

150

°С

Storage Temperature

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

G-D Breakdown Voltage

-20

V

Gate Off Voltage

-0.2

-0.6

-1.0

V

Drain Current

100

350

μA

Forward Transfer Admittance

|YFS|

0.65

1.0

ms

Input Capacitance

CISS

3.5

pF

Reverse Transfer Capacitance

CRSS

0.65

pF

Voltage Gain

-3.0

dB

Reduced Voltage Characteristic

△

-1.2

-3.5

dB

Frequency Characteristic

△

f=1KHz~110Hz

-1.0

dB

Input Resistance

f=1KHz

25

MΩ

Output Resistance

f=1KHz

1000

Ω

Total Harmonic Distortion

THD

1.2

%

Output Noise Voltage

-110

dB



RANK

E3

E4

E5

RANGE

100-170

140-240

210-350