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BFP640F датащи(PDF) 13 Page - Infineon Technologies AG

номер детали BFP640F
подробное описание детали  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  28 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP640F датащи(HTML) 13 Page - Infineon Technologies AG

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BFP640F
Electrical Characteristics
Data Sheet
13
Revision 2.0, 2015-03-13
Table 5-3
AC Characteristics,
V
CE =3V, f =0.45GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
33
31
–
–
dB
IC =25mA
IC =25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.55
26
–
–
dB
IC =6 mA
IC =6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
10.5
23.5
–
–
dBm
ZS = ZL =50 Ω
IC =25mA
IC =25mA
Table 5-4
AC Characteristics,
V
CE =3V, f =0.9 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
28.5
26.5
–
–
dB
IC =25mA
IC =25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.55
23.5
–
–
dB
IC =6 mA
IC =6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
12.5
26
–
–
dBm
ZS = ZL =50 Ω
IC =25mA
IC =25mA
Table 5-5
AC Characteristics,
V
CE =3V, f =1.5 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|
2
–
–
25
22.5
–
–
dB
IC =25mA
IC =25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
20.5
–
–
dB
IC =6 mA
IC =6 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
12
26
–
–
dBm
ZS = ZL =50 Ω
IC =25mA
IC =25mA



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