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2SC2073 датащи(PDF) 2 Page - Unisonic Technologies

номер детали 2SC2073
подробное описание детали  NPN SILICON POWER TRANSISTOR
PDF  3 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC2073 датащи(HTML) 2 Page - Unisonic Technologies

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2SC2073
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R221-021.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
Continuous
IC
1.5
A
Peak
ICM
3.0
A
Base Current
IB
0.5
A
Total Power Dissipation @ TC=25°C
PD
25
W
Derate above 25°C
0.2
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction-to-Case
θJC
5.0
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
IC=1.0mA, IB=0
150
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=5.0mA, IB=0
150
V
Emitter-Base Breakdown Voltage
BVEBO
IB=1.0mA, IC=0
5.0
V
Collector Cut-Off Current
ICBO
VCB=120V, IE=0
10
μA
Emitter Cut-Off Current
IEBO
VEB=5.0V, IC=0
10
μA
ON CHARACTERISTICS (Note 1)
DC Current Gain
hFE
VCE=10V, IC=0.5A
40
140
Collector-Emitter Saturation Voltage
VCE(SAT) IC=0.5A, IB=50mA
1.5
V
Base-Emitter On Voltage
VBE(ON)
IC=500mA, VCE=10V
0.65
0.85
V
DYNAMIC CHARACTERISTICS
Current-Gain -Bandwidth Product
fT
IC=0.5A,VCE=10V, f=1.0MHz
4.0
MHz
Notes: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.



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