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MICRF004BN датащи(PDF) 4 Page - Micrel Semiconductor

номер детали MICRF004BN
подробное описание детали  QwikRadio??Low-Power VHF Receiver Advance Information
PDF  16 Pages
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производитель  MICREL [Micrel Semiconductor]
домашняя страница  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MICRF004BN датащи(HTML) 4 Page - Micrel Semiconductor

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MICRF004/RF044
Micrel
MICRF004
4
February 9, 2000
Electrical Characteristics
V
DDRF = VDDBB = VDD where +4.75V ≤ VDD ≤ 5.5V, VSS = 0V; CAGC = 4.7µF, CTH = 0.047µF; fREFOSC = 4.65MHz; TA = 25°C, bold
values indicate –40
°C ≤ T
A ≤ +85°C; current flow into device pins is positive; unless noted.
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
OP
Operating Current
continuous operation
2.4
mA
10:1 duty cycle
240
µA
I
STBY
Standby Current
V
SHUT = VDD
0.35
µA
RF Section, IF Section
Receiver Sensitivity
Notes 4, 6
–80
dBm
f
IF
IF Center Frequency
Note 7
0.86
MHz
f
BW
IF 3dB Bandwidth
Notes 6, 7
0.43
MHz
f
ANT
RF Input Range
145
200
MHz
Z
IN(ant)
Antenna Input Impdeance
f
IN = 150MHz
422
Receive Modulation Duty-Cycle
20
80
%
Maximum Receiver Input
R
SC = 50Ω
–20
dBm
Spurious Reverse Isolation
ANT pin, R
SC = 50Ω, Note 5
30
µVrms
AGC Attack to Decay Ratio
t
ATTACK ÷ tDECAY
0.1
AGC Leakage Current
T
A = +85°C
±200
nA
Reference Oscillator
Reference Oscillator
extermal reference (250mV peak)
6
ms
Stabilization Time
ceramic resonator
5
ms
crystal
10
ms
Z
REFOSC
Reference Oscillator
290
k
Input Impedance
Reference Oscillator
Note 10
0.1
2
Vp-p
Input Sensitivity
I
REFOSC
Reference Oscillator Current
4.5
µA
Demodulator
Z
CTH
CTH Source Impedance
Note 8
124
k
∆Z
CTH
CTH Source Impedance Variation
±15
%
I
ZCTH(leak)
CTH Leakage Current
T
A = +85°C
±200
nA
Demodulator Filter Bandwidth
V
SEL0 = VSEL1 = VSWEN = VDD, Notes 7, 9
3960
Hz
Demodulator Filter Bandwidth
V
SEL0 = VSEL1 = VDD, VSWEN = VSS,
7930
Hz
Note 7, 9
Absolute Maximum Ratings (Note 1)
Supply Voltage (V
DDRF, VDDBB) .................................... +7V
Reference Oscillator Input Voltage (V
REFOSC) .......... VDDBB
Input/Output Voltage (V
I/O) ................. VSS–0.3 to VDD+0.3
Junction Temperature (T
J) ...................................... +150°C
Storage Temperature Range (T
S) ............ –65°C to +150°C
Lead Temperature (soldering, 10 sec.) ................... +260
°C
ESD Rating, Note 3
Operating Ratings (Note 2)
Supply Voltage (V
DDRF, VDDBB) ................ +4.75V to +5.5V
Ambient Temperature (T
A) ......................... –40°C to +85°C
Package Thermal Resistance (
θ
JA)
16-pin DIP (
θ
JA) ................................................... 90°C/W
16-pin SOIC (
θ
JA) .............................................. 120°C/W



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