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MICRF004 датащи(PDF) 9 Page - Micrel Semiconductor |
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MICRF004 датащи(HTML) 9 Page - Micrel Semiconductor |
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9 / 16 page ![]() February 9, 2000 9 MICRF004/RF044 MICRF004/RF044 Micrel I/O Pin Interface Circuitry Interface circuitry for the various I/O pins of the MICRF004 are diagrammed in Figures 1 through 6. The ESD protection diodes at all input and output pins are not shown. ANT Pin 50 3pF 6k Active Load Active Bias ANT Figure 1. ANT Pin The ANT pin is internally ac-coupled, through a 3pF capaci- tor, to an RF N-channel MOSFET, as shown in Figure 1. Impedance from this pin to VSS is high at low frequencies and decreases as frequency increases. In the VHF frequency range, the device input can be modeled as a 6.3k Ω in parallel with 2pF (pin capacitance) shunt to the VSSRF pin. CTH Pin 6.9pF PHI2B PHI1B PHI1 PHI2 CTH Demodulator Signal 2.85Vdc VDDBB VSSBB VSSBB Figure 2. CTH Pin Figure 2 illustrates the CTH-pin interface circuit. The CTH pin is driven from a P-channel MOSFET source-follower with approximately 10 µA of bias. Transmission gates TG1 and TG2 isolate the 6.9pF capacitor. Internal control signals PHI1/PHI2 are related in a manner such that the impedance across the transmission gates looks like a “resistance” of approximately 100k Ω. The dc potential at the CTH pin is approximately 1.6V CAGC Pin VDDBB VSSBB 675µA 67.5µA Compa- rator 1.5µA 15µA Timout CAGC Figure 3. CAGC Pin Figure 3 illustrates the CAGC pin interface circuit. The AGC control voltage is developed as an integrated current into a capacitor C AGC. The attack current is nominally 15µA, while the decay current is a 1/10th scaling of this, nominally 1.5 µA, making the attack/decay timeconstant ratio a fixed 10:1. Signal gain of the RF/IF strip inside the IC diminishes as the voltage at CAGC decreases. Modification of the attack/decay ratio is possible by adding resistance from the CAGC pin to either V DDBB or VSSBB, as desired. Both the push and pull current sources are disabled during shutdown, which maintains the voltage across C AGC, and improves recovery time in duty-cycled applications. To fur- ther improve duty-cycle recovery, both push and pull currents are increased by 45 times for approximately 10ms after release of the SHUT pin. This allows rapid recovery of any voltage droop on C AGC while in shutdown. DO and WAKEB Pins VDDBB VSSBB Compa- rator 10µA 10µA DO Figure 4. DO and WAKEB Pins The output stage for DO (digital output) and WAKEB (wakeup output) is shown in Figure 4. The output is a 10 µA push and 10 µA pull switched-current stage. This output stage is ca- pable of driving CMOS loads. An external buffer-driver is recommended for driving high-capacitance loads. REFOSC Pin 250 Ω 200k Active Bias REFOSC 30pF 30pF 30µA VDDBB VSSBB VSSBB Figure 5. REFOSC Pin The REFOSC input circuit is shown in Figure 5. Input imped- ance is high (200k Ω). This is a Colpitts oscillator with internal 30pF capacitors. This input is intended to work with standard ceramic resonators connected from this pin to the VSSBB pin, although a crystal may be used when greater frequency accuracy is required. The nominal dc bias voltage on this pin is 1.4V. |
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