PXAC182002FC datasheet(2/8 Pages) INFINEON

номер детали	PXAC182002FC

подробное описание детали	Thermally-Enhanced High Power RF LDMOS FET

PDF	8 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2 / 8 page

Data Sheet

2 of 8

Rev. 02.2, 2015-06-05

PXAC182002FC

DC Characteristics (each side)

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

—

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

0.1

µA

VDS = 63 V, VGS = 0 V

IDSS

—

1.0

µA

On-State Resistance (main)

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.18

—

(peak)

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.135

—

Operating Gate Voltage (main)

VDS = 28 V, IDQ = 400 mA

VGS

2.55

2.65

2.75

(peak)

VDS = 28 V, IDQ = 0 A

VGS

0.9

1.2

1.3

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

0.1

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGS

–6 to +10

Operating Voltage

VDD

0 to +32

Junction Temperature

225

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (main, TCASE = 70°C, 28 W CW)

RqJC

1.088

°C/W

(peak, TCASE = 70°C, 100 W CW)

RqJC

0.587

°C/W

Ordering Information

Type and Version

Order Code

Package Description

Shipping

PXAC182002FC V1

PXAC182002FCV1XWSA1

H-37248-4, earless flange

Tray

PXAC182002FC V1 R250

PXAC182002FCV1R250XTMA1

H-37248-4, earless flange

Tape & Reel, 250 pcs

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