MJE2955T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2

www.unisonic.com.tw

QW-R203-012.E



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-70

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-5

V

Collector current

-10

A

Base Current

-6

A

TO-220

75

W

TO-252

20

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0°C ~70°C



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Breakdown Voltage

-60

V

Collector-Base Breakdown Voltage

-70

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cut-Off Current

-1

mA

-700

A

-1

mA

Emitter Cut-Off Current

-5

mA

Collector-Emitter Saturation Voltage

-1.1

V

-8.0

Baser-Emitter on Voltage

-1.8

V

DC Current Gain

20

100

5

Current Gain Bandwidth Product

2

MHZ