2SA1201G-X-AB3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SA1201

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R204-024.E



ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-120

Collector-Emitter Voltage

VCEO

-120

Emitter-Base Voltage

VEBO

-5

Collector Current

-800

Base Current

-160

Collector Power Dissipation

SOT-89

500

1000 (Note 2)

TO-92

600

Junction Temperature

150

C

Storage Temperature

TSTG

-55 ~ +150

C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Mounted on cermic substrate( 250mm

2 × 0.8t )



ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector to Emitter Breakdown Voltage

V(BR)CEO

IC= -10mA, IB=0

-120

Emitter to Base Breakdown Voltage

V(BR)EBO

IE= -1mA, IC=0

-5

Collector Cut-Off Current

ICBO

VCB= -120V, IE=0

-0.1

μA

Emitter Cut-Off Current

IEBO

VEB= -5V, IC=0

-0.1

μA

DC Current Gain

hFE

VCE= -5V, IC= -100mA

240

Collector to Emitter Saturation Voltage

VCE(SAT)

IC= -500mA, IB= -50mA

-1.0

Base to Emitter Voltage

VBE

VCE= -5V, IC= -100mA

-1.0

Transition Frequency

VCE= -5V, IC= -100mA

120

MHz

Collector Output Capacitance

COB

VCB= -10V, IE=0, f=1MHz



CLASSIFICATION OF hFE

RANK

RANGE

80 - 160

120 - 240

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