MBRF50040R datasheet(1/3 Pages) GENESIC

номер детали	MBRF50040R

подробное описание детали	High Surge Capability

PDF	3 Pages

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производитель	GENESIC [GeneSiC Semiconductor, Inc.]

домашняя страница	http://www.genesicsemi.com/

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VRRM = 20 V - 40 V

IF(AV) = 500 A

Features

• High Surge Capability

TO-244AB Package

• Types from 20 V to 40 V VR

• Not ESD Sensitive

Parameter

Symbol

MBRF50020(R) MBRF50030(R)

Unit

Repetitive peak reverse

voltage

VRRM

20

30

V

RMS reverse voltage

VRMS

14

21

V

Silicon Power

Schottky Diode

Conditions

40

28

MBRF50020 thru MBRF50040R

MBRF50040(R)

35

25

MBRF50035(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

DC blocking voltage

VDC

20

30

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRF50020(R) MBRF50030(R)

Unit

Average forward current

(per pkg)

IF(AV)

500

A

Maximum forward voltage

(per leg)

0.75

11

10

50

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.30

°C/W

mA

V

-55 to 150

40

35

0.30

Tj = 150 °C

TC = 125 °C

500

Tj = 25 °C

IFM = 250 A, Tj = 25 °C

Conditions

-55 to 150

0.75

50

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated DC

blocking voltage (per leg)

IR

VF

-55 to 150

MBRF50040(R)

11

0.30

50

MBRF50035(R)

Peak forward surge current

(per leg)

IFSM

tp = 8.3 ms, half sine

3500

A

Tj = 100 °C

10

500

3500

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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