PJS6415AE datasheet(1/6 Pages) PANJIT

номер детали	PJS6415AE

подробное описание детали	20V P-Channel Enhancement Mode MOSFET ??ESD Protected

PDF	6 Pages

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производитель	PANJIT [Pan Jit International Inc.]

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PPJS6415AE

April 29,2015-REV.01

Page 1

20V P-Channel Enhancement Mode MOSFET

– ESD Protected

Voltage

-20 V

Current

-4.9A

SOT-23 6L-1

Unit : inch(mm)

Features

 RDS(ON) , VGS@-10V, ID@-4.9A<60m

Ω

 RDS(ON) , VGS@-4.5V, ID@-4.2A<70m

Ω

 RDS(ON) , VGS@-2.5V, ID@-3.1A<96m

Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc

 ESD Protected 2KV HBM

 Lead free in comply with EU RoHS 2011/65/EU directives.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-23 6L-1 Package



Terminals : Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.0003 ounces, 0.0084 grams



Marking: S5E

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

+12

V

Continuous Drain Current

ID

-4.9

A

Pulsed Drain Current

IDM

-19.6

A

Power Dissipation

Ta=25

oC

PD

2

W

Derate above 25

oC

16

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal resistance

-

Junction to Ambient

(Note 3)

RθJA

62.5

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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