MJ413 datasheet(1/2 Pages) MCC

номер детали	MJ413

подробное описание детали	10 Amp NPN Silicon Power Transistors 125W

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производитель	MCC [Micro Commercial Components]

домашняя страница	http://www.mccsemi.com

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MJ413

MJ423

MJ431

10 Amp

NPN Silicon

Power Transistors

125W

)HDWXUHV

•

High Collector-Emitter Voltage VCES=400V

•

DC Current Gain Specified 3.5A

•

High Frequency Response to 2.5 MHz

0D[LPXP5DWLQJV

•

Operating Temperature: -55

°C to +150°C

•

Storage Temperature: -55

°C to +150°C

•

Maximum Thermal Resistance: 1.0

:/W junction to case

Characteristic

Symbol

Max

Unit

Collector-Emitter Voltage

VCEX

400

Vdc

Collector-Base Voltage

VCB

400

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current-Continuous

IC

10

Adc

Base Current

IB

2.0

Adc

Total Device Dissipation @TC=25

:

Derate above 25

:

PD

125

1.0

Watts

W/

:

TO-3

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

1.550

REF

39.37

REF

B

-----

1.050

-----

26.67

C

.250

.335

6.35

8.51

D

.038

.043

0.97

1.09

E

0.55

0.70

1.40

1.77

G

.430

BSC

10.92

BSC

H

.215

BSC

5.46

BSC

K

.440

.480

11.18

12.19

L

.665

BSC

16.89

BSC

N

-----

.830

-----

21.08

Q

.151

.165

3.84

4.19

∅

U

1.187

BSC

30.15

BSC

V

.131

.188

3.33

4.77

A

N

E

D

C

K

PIN 1.

BASE

PIN 2.

EMITTER

CASE.

COLLECTOR

Power Dissipation (W) - Versus - Temperature

°C

Figure 1 - Power Derating Curve

Temperature

°C

0

50

100

150

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omponents

21201 Itasca Street Chatsworth

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