MBR10150CT datasheet(2/3 Pages) MCC

номер детали	MBR10150CT

подробное описание детали	10 Amp High Voltage 150Volts Barrier Rectifier Power Schottky

PDF	3 Pages

Scroll/Zoom	100%

производитель	MCC [Micro Commercial Components]

домашняя страница	http://www.mccsemi.com

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MBR10150CT

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

IF(av) (A)

PF(av)(W)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ=tp/T

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

100

125

150

175

Tamb(°C)

IF(av)(A)

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

δ=tp/T

Fig. 2: Average forward current versus ambient

temperature (

δ = 0.5, per diode).

1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=125°C

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration (per diode).

100

125

150

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

VR(V)

IR(µA)

Tj=75°C

Tj=25°C

Tj=125°C

Tj=150°C

Tj=175°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

100

200

100

200

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

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