BFS17A_15 datasheet(2/6 Pages) JMNIC

2 / 6 page

September1995

Philips Semiconductors

Product speciﬁcation

NPN 3 GHz wideband transistor

BFS17A

DESCRIPTION

NPN transistor in a plastic SOT23 package.

APPLICATIONS

• It is intended for RF applications such as oscillators

in TV tuners.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 SOT23.

Marking code: E2p.

handbook, halfpage

MSB003

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note to the Quick reference data and the Limiting values

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

DC collector current

−

Ptot

total power dissipation

up to Ts =70 °C; note 1

−

300

transition frequency

IC = 25 mA; VCE = 5 V; f = 500 MHz;

Tamb =25 °C

2.8

−

GHz

GUM

maximum unilateral power gain

IC = 14 mA; VCE = 10 V; f = 800 MHz

13.5

−

noise ﬁgure

IC = 2 mA; VCE = 5 V; f = 800 MHz;

Tamb =25 °C

2.5

−

output voltage

dim = −60 dB; IC = 14 mA; VCE =10V;

RL =75 Ω; Tamb =25 °C;

f(p+q−r) = 793.25 MHz

150

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

DC collector current

−

ICM

peak collector current

−

Ptot

total power dissipation

up to Ts =70 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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