BFR520_15 datasheet(2/12 Pages) JMNIC

2 / 12 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFR520

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

DESCRIPTION

The BFR520 is an npn silicon planar

epitaxial transistor, intended for

applications in the RF frontend in

wideband applications in the GHz

range, such as analog and digital

cellular telephones, cordless

telephones (CT1, CT2, DECT, etc.),

radar detectors, pagers and satellite

TV tuners (SATV) and repeater

amplifiers in fibre-optic systems.

The transistor is encapsulated in a

plastic SOT23 envelope.

PINNING

DESCRIPTION

Code: N28

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

−−

VCES

collector-emitter voltage

RBE =0

−−

DC collector current

−−

Ptot

total power dissipation

up to Ts = 97 °C; note 1

−−

300

hFE

DC current gain

IC = 20 mA; VCE = 6 V

120

250

Cre

feedback capacitance

IC =ic = 0; VCB = 6 V; f = 1 MHz

−

0.4

−

transition frequency

IC = 20 mA; VCE = 6 V; f = 1 GHz

−

GHz

GUM

maximum unilateral

power gain

IC = 20 mA; VCE = 6 V;

Tamb = 25 °C; f = 900 MHz

−

IC = 20 mA; VCE = 6 V;

Tamb = 25 °C; f = 2 GHz

−

S212

insertion power gain

IC = 20 mA; VCE = 6 V;

Tamb = 25 °C; f = 900 MHz

−

noise ﬁgure

s = Γopt;IC = 5 mA; VCE = 6 V;

Tamb =25 °C; f = 900 MHz

−

1.1

1.6

s = Γopt;IC = 20 mA; VCE = 6 V;

Tamb =25 °C; f = 900 MHz

−

1.6

2.1

s = Γopt;IC = 5 mA; VCE = 8 V;

Tamb =25 °C; f = 2 GHz

−

1.9

−

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