2001 Apr 25

2

Philips Semiconductors

Product specification

Dual N-channel dual gate MOS-FET

BF1204

FEATURES

• Two low noise gain controlled amplifiers in a single

package

• Superior cross-modulation performance during AGC

• High forward transfer admittance

• High forward transfer admittance to input capacitance

ratio.

APPLICATIONS

• Gain controlled low noise amplifiers for VHF and UHF

applications with 3 to 9 V supply voltage, such as digital

and analog television tuners and professional

communications equipment.

DESCRIPTION

The BF1204 is a combination of two equal dual gate

MOS-FET amplifiers with shared source and gate 2 leads.

The source and substrate are interconnected. Internal bias

circuits enable DC stabilization and a very good

cross-modulation performance during AGC. Integrated

diodes between the gates and source protect against

excessive input voltage surges. The transistor has a

SOT363 micro-miniature plastic package.

PINNING - SOT363

PIN

DESCRIPTION

1

gate 1 (a)

2

gate 2

3

gate 1 (b)

4

drain (b)

5

source

6

drain (a)

handbook, halfpage

MBL252

AMP

a

AMP

b

d (a)

s

d (b)

g1 (a)

Top view

g2

g1 (b)

13

2

4

5

6

Fig.1 Simplified outline and symbol.

Marking code: L3-

QUICK REFERENCE DATA

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per MOS-FET; unless otherwise specified

drain-source voltage

−−

10

V

drain current (DC)

−−

30

mA

total power dissipation

−−

200

mW

y

forward transfer admittance

25

30

40

mS

input capacitance at gate 1

−

1.7

2.2

pF

reverse transfer capacitance

f = 1 MHz

−

15

−

fF

NF

noise figure

f = 800 MHz

−

1.1

1.8

dB

cross-modulation

input level for k = 1% at 40 dB AGC 100

105

−

dB

µV

operating junction temperature

−−

150

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.