NXP Semiconductors

PMZB390UNE

30 V, N-channel Trench MOSFET

PMZB390UNE

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Product data sheet

12 March 2015

8 / 14

0

4

3

1

2

aaa-015991

2

1

3

4

(A)

0

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

aaa-015992

1.0

0.5

1.5

2.0

a

0.0

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-60

180

120

0

60

aaa-015993

0.5

1.0

1.5

(V)

0.0

min

typ

max

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

aaa-015994

10

1

10

C

(pF)

1

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values