BF998WR datasheet(2/12 Pages) JMNIC

2 / 12 page

1997 Sep 05

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FET

BF998WR

FEATURES

• High forward transfer admittance

• Short channel transistor with high forward transfer

admittance to input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

• VHF and UHF applications with 12 V supply voltage,

such as television tuners and professional

communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic

microminiature SOT343R package with source and

substrate interconnected. The transistor is protected

against excessive input voltage surges by integrated

back-to-back diodes between gates and source.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

SYMBOL

DESCRIPTION

s, b

source

drain

3g2

gate 2

4g1

gate 1

Fig.1 Simplified outline (SOT343R) and symbol.

Marking code: MB.

MAM198

Top view

s,b

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

drain-source voltage

−−

drain current

−−

Ptot

total power dissipation

−−

300

operating junction temperature

−−

150

°C

y

fs

forward transfer admittance

−

Cig1-s

input capacitance at gate 1

−

2.1

−

Crs

reverse transfer capacitance

f=1MHz

−

noise ﬁgure

f = 800 MHz

−

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