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PMCM650VNE датащи(PDF) 9 Page - NXP Semiconductors

номер детали PMCM650VNE
подробное описание детали  12 V, N-channel Trench MOSFET
PDF  15 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMCM650VNE датащи(HTML) 9 Page - NXP Semiconductors

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NXP Semiconductors
PMCM650VNE
12 V, N-channel Trench MOSFET
PMCM650VNE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 April 2015
9 / 15
QG (nC)
0
20
16
8
12
4
aaa-017451
2
3
1
4
5
VGS
(V)
0
ID = 3 A; VDS = 6 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
VSD (V)
0
0.8
0.6
0.2
0.4
aaa-017452
0.4
0.8
1.2
IS
(A)
0
Tj = 150 °C
Tj = 25 °C
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 18. Duty cycle definition



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