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TC4069G-S14-R датащи(PDF) 3 Page - Unisonic Technologies

номер детали TC4069G-S14-R
подробное описание детали  INVERTER CIRCUITS
PDF  5 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TC4069G-S14-R датащи(HTML) 3 Page - Unisonic Technologies

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TC4069
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-635.A
ABSOLUTE MAXIMUM RATINGS (Note 2, 3)
PARAMETER
SYMBOL
RATINGS
UNIT
DC Supply Voltage
VDD
-0.5 ~ +20
V
Input Voltage
VIN
-0.5 ~ VDD +0.5
V
Storage Temperature
TS
-65 ~ +150
℃
DIP-14
300
Power Dissipation
SOP-14
PD
180
mW
Junction Temperature
TJ
125
℃
Operating Temperature
TOPR
-40 ~ +85
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. AC Parameters are guaranteed by DC correlated testing.
3. IOH and IOL are tested one output at a time.
RECOMMENDED OPERATING CONDITIONS (VSS=0V )
PARAMETER
SYMBOL
RATINGS
UNIT
DC Supply Voltage
VDD
3 ~ 18
V
Input Voltage
VIN
0 ~ VDD
V
Operating Temperature
TA
-40 ~ 85
℃
DC ELECTRICAL CHARACTERISTICS (TA=25 ,
℃
unless otherwise specified.)(Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
VDD=5V, VIN=VDD or VSS
0.25
VDD=10V, VIN=VDD or VSS
0.5
Quiescent Device Current
IDD
VDD=15V, VIN=VDD or VSS
1
μA
VDD=5V
0
0.05
VDD=10V
0
0.05
Low
VOL
|IO|<1μA
VDD=15V
0
0.05
V
VDD=5V
4.95
5
VDD=10V
9.95
10
Output Voltage
High
VOH
|IO|<1μA
VDD=15V
14.95
15
V
VDD=5V, VO=4.5V
1.0
VDD=10V, VO=9V
2.0
Low
VIL
|IO|<1μA
VDD=15V,VO=13.5V
3.0
V
VDD=5V, VO=0.5V
4.0
VDD=10V, VO=1V
8.0
Input Voltage
High
VIH
|IO|<1μA
VDD=15V, VO=1.5V
12.0
V
VDD=5V, VO=0.4V
0.51
1.2
VDD=10V, VO=0.5V
1.3
3.2
Low
IOL
VDD=15V, VO=1.5V
3.4
12
mA
VDD=5V, VO=4.6V
-0.51
-1
VDD=5V, VO=2.5V
-2.1
-4
VDD=10V, VO=9.5V
-1.3
-2.2
Output Current (Note 3)
High
IOH
VDD=15V, VO=13.5V
-3.4
-9
mA
VDD=15V, VIN=0V
-10
-5
-0.1
Input Current
IIN
VDD=15V, VIN=15V
10
-5
0.1
μA



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