MAX660 datasheet(2/12 Pages) MAXIM

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CONDITIONS

CMOS Monolithic Voltage Converter

_______________________________________________________________________________________

Supply Voltage (V+ to GND, or GND to OUT) .......................+6V

LV Input Voltage ...............................(OUT - 0.3V) to (V+ + 0.3V)

FC and OSC Input Voltages........................The least negative of

(OUT - 0.3V) or (V+ - 6V) to (V+ + 0.3V)

OUT and V+ Continuous Output Current..........................120mA

Output Short-Circuit Duration to GND (Note 1) ....................1sec

Continuous Power Dissipation (TA = +70°C)

Plastic DIP (derate 9.09mW/°C above + 70°C) ............727mW

SO (derate 5.88mW/°C above +70°C) ..........................471mW

CERDIP (derate 8.00mW/°C above +70°C) ..................640mW

Operating Temperature Ranges

MAX660C_ _ ........................................................0°C to +70°C

MAX660E_ _ .....................................................-40°C to +85°C

MAX660MJA ...................................................-55°C to +125°C

Storage Temperature Range............................... -65°to +160°C

Lead Temperature (soldering, 10sec) ........................... +300°C

ELECTRICAL CHARACTERISTICS

(V+ = 5V, C1 = C2 = 150µF, test circuit of Figure 1, FC = open, TA = TMIN to TMAX, unless otherwise noted.) (Note 2)

Stresses beyond those listed under “Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS

Note 2: In the test circuit, capacitors C1 and C2 are 150µF, 0.2

Ω maximum ESR, aluminum electrolytics.

Capacitors with higher ESR may reduce output voltage and efficiency. See

Capacitor Selection section.

Note 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. See

Capacitor Selection section.

Note 4: The ESR of C1 = C2

≤ 0.5Ω. Guaranteed by correlation, not production tested.

Note 1: OUT may be shorted to GND for 1sec without damage, but shorting OUT to V+ may damage the device and should be

avoided. Also, for temperatures above +85°C, OUT must not be shorted to GND or V+, even instantaneously, or device

damage may result.

Doubler, LV = OUT

Inverter, LV = GND

Inverter, LV = open

IL = 100mA to GND

RL = 500Ω connected between OUT and GND

FC = open

TA ≤ +85°C

RL = 1kΩ connected between V+ and OUT

FC = V+

TA ≤ +85°C, C1 = C2 = 150µF

TA ≤ +85°C, C1 = C2 = 10µF, FC = V+ (Note 4)

FC = open, LV = open

FC = V+, LV = open

TA ≤ +85°C, OUT more negative than -4V

FC = open

TA > +85°C, OUT more negative than -3.8V

FC = V+

99.00

99.96

No load

Voltage-Conversion

Efficiency

Power Efficiency

±8

OSC Input Current

µA

±1

kHz

Oscillator Frequency

2.5

5.5

1.5

5.5

3.0

5.5

RL = 1kΩ

Operating Supply Voltage

510

6.5

10.0

Ω

IL = 100mA

Output Resistance (Note 3)

0.12

0.5

No load

Supply Current

100

Output Current

UNITS

MIN

TYP

MAX

PARAMETER

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