CSD87501L datasheet(3/12 Pages) TI

3 / 12 page

CSD87501L

www.ti.com

SLPS523A – FEBRUARY 2015 – REVISED APRIL 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVS1S2

Source-to-Source Voltage

VGS = 0 V, IS = 250 μA

IS1S2

Source-to-Source Leakage Current

VGS = 0 V, VS1S2 = 24 V

μA

IGSS

Gate-to-Source Leakage Current

VS1S2 = 0 V, VGS = 20 V

µA

VGS(th)

Gate-to-Source Threshold Voltage

VS1S2 = VGS, IS = 250 μA

1.3

1.8

2.3

VGS = 4.5 V, IS = 7 A

9.3

11.0

Ω

RS1S2(on)

Source-to-Source On-Resistance

VGS = 10 V, IS = 7 A

6.6

7.8

Ω

gƒs

Transconductance

VS1S2 = 3 V, IS = 7 A

DYNAMIC CHARACTERISTICS(1)

Ciss

Input Capacitance

1620

2110

Coss

Output Capacitance

VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz

189

246

Crss

Reverse Transfer Capacitance

152

198

Series Gate Resistance

300

450

Ω

Gate Charge Total (4.5 V)

Gate Charge Total (10 V)

Qgd

Gate Charge Gate-to-Drain

VS1S2 = 15 V, IS = 7 A

6.0

Qgs

Gate Charge Gate-to-Source

5.0

Qg(th)

Gate Charge at Vth

2.5

Qoss

Output Charge

VS1S2 = 15 V, VGS = 0 V

7.6

td(on)

Turn On Delay Time

164

Rise Time

260

VS1S2 = 15 V, VGS = 10 V,

IS1S2 = 7 A, RG = 0 Ω

td(off)

Turn Off Delay Time

709

tƒ

Fall Time

712

(1)

Dynamic characteristics values specified are per single FET.

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

Junction-to-Ambient Thermal Resistance(1)

135

RθJA

°C/W

Junction-to-Ambient Thermal Resistance(2)

(1)

Device mounted on FR4 material with minimum Cu mounting area.

(2)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

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