CSD19534KCS_15 datasheet(1/12 Pages) TI

номер детали	CSD19534KCS

подробное описание детали	CSD19534KCS 100 V N-Channel NexFET Power MOSFET

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производитель	TI [Texas Instruments]

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VGS - Gate-to-Source Voltage (V)

2

4

6

8

10

12

14

16

18

20

0

5

10

15

20

25

30

35

40

45

D007

TC = 25°C, I D = 30 A

TC = 125°C, I D = 30 A

Qg - Gate Charge (nC)

0

2

4

6

8

10

12

14

16

18

0

2

4

6

8

10

D004

ID = 30 A

VDS = 50 V

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

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CSD19534KCS

SLPS530 – JANUARY 2015

CSD19534KCS 100 V N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

Ultra-Low Qg and Qgd

TA = 25°C

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

VDS

Drain-to-Source Voltage

100

V

•

Avalanche Rated

Qg

Gate Charge Total (10 V)

16.4

nC

Qgd

Gate Charge Gate-to-Drain

3.3

nC

•

Pb-Free Terminal Plating

VGS = 6 V

16.3

m

Ω

•

RoHS Compliant

RDS(on)

Drain-to-Source On-Resistance

VGS = 10 V

13.7

m

Ω

•

Halogen Free

VGS(th)

Threshold Voltage

2.8

V

•

TO-220 Plastic Package

Ordering Information(1)

2 Applications

Device

Package

Media

Qty

Ship

•

Secondary Side Synchronous Rectifier

CSD19534KCS

TO-220 Plastic Package

Tube

50

Tube

•

Motor Control

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

Absolute Maximum Ratings

This 100 V, 13.7 m

Ω, TO-220 NexFET™ power

MOSFET is designed to minimize losses in power

TA = 25°C

VALUE

UNIT

conversion applications.

VDS

Drain-to-Source Voltage

100

V

VGS

Gate-to-Source Voltage

±20

V

SPACE

Continuous Drain Current (Package limited)

100

Continuous Drain Current (Silicon limited),

54

ID

TC = 25°C

A

Continuous Drain Current (Silicon limited),

38

TC = 100°C

IDM

Pulsed Drain Current (1)

138

A

PD

Power Dissipation

118

W

TJ,

Operating Junction and

–55 to 175

°C

Tstg

Storage Temperature Range

Avalanche Energy, single pulse

EAS

54

mJ

ID = 33 A, L = 0.1 mH, RG = 25 Ω

(1) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%

.

RDS(on) vs VGS

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Аналогичный номер детали - CSD19534KCS_15

производитель	номер детали	датащи	подробное описание детали
Texas Instruments	CSD19534KCS.B	827Kb / 13P	CSD19534KCS 100V N-Channel NexFET™ Power MOSFET REVISED DECEMBER 2024

More results

Аналогичное описание - CSD19534KCS_15

производитель	номер детали	датащи	подробное описание детали
Texas Instruments	CSD19532Q5B	1Mb / 13P	100 V N-Channel NexFET Power MOSFET
	CSD19532Q5B	1Mb / 13P	100 V N-Channel NexFET??Power MOSFET
	CSD19533Q5A	1Mb / 13P	100 V N-Channel NexFET Power MOSFETs
	CSD19533KCS	768Kb / 10P	100 V N-Channel NexFET Power MOSFETs
	CSD19535KCS	804Kb / 10P	CSD19535KCS, 100 V N-Channel NexFET Power MOSFET
	CSD19536KCS	467Kb / 10P	CSD19536KCS, 100 V N-Channel NexFET Power MOSFET
	CSD19536KTT	852Kb / 14P	CSD19536KTT 100 V N-Channel NexFET Power MOSFET
	CSD19537Q3	478Kb / 13P	CSD19537Q3 100 V N-Channel NexFET Power MOSFET
	CSD19538Q3A	348Kb / 13P	100 V N-Channel NexFET Power MOSFET
	CSD18511KTT	377Kb / 11P	40-V N-Channel NexFET Power MOSFET

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CSD19534KCS датащи(PDF) 1 Page - Texas Instruments

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Аналогичный номер детали - CSD19534KCS_15

Аналогичное описание - CSD19534KCS_15

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