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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLS4030PBF датащи(PDF) 1 Page - International Rectifier |
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IRLS4030PBF датащи(HTML) 1 Page - International Rectifier |
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1 / 10 page  02/12/09 www.irf.com 1 HEXFET® Power MOSFET Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G PD - 97370 IRLS4030PbF IRLSL4030PbF GD S Gate Drain Source VDSS 100V RDS(on) typ. 3.4m Ω max. 4.3mΩ ID 180A D2Pak IRLS4030PbF TO-262 IRLSL4030bF G D S GD S Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy f mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case jk ––– 0.40 °C/W RθJA Junction-to-Ambient (PCB Mount) ij ––– 40 300 Max. 180 130 730 305 See Fig. 14, 15, 22a, 22b 370 21 -55 to + 175 ± 16 2.5 |
Аналогичный номер детали - IRLS4030PBF |
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Аналогичное описание - IRLS4030PBF |
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