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MAX4272ESA датащи(PDF) 17 Page - Maxim Integrated Products |
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MAX4272ESA датащи(HTML) 17 Page - Maxim Integrated Products |
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17 / 24 page ![]() 3V to 12V Current-Limiting Hot Swap Controllers with Autoretry, DualSpeed/BiLevel Fault Protection ______________________________________________________________________________________ 17 CTON determines the maximum time allowed to com- plete turn-on for the MAX4273. The default values for turn-on time (tON) and tRETRY are chosen by leaving these pins floating; they are 10µs and 320µs, respec- tively. These are also the minimum values (not con- trolled and dependent on stray capacitance). Longer timings are determined by the size of the capacitor according to Figure 8, and can be determined in Table 5, which lists the startup and retry timing parameters. Set the tON timer long enough to allow for the MOSFET to be enhanced and the load capacitor to be charged com- pletely . There are two ways of completing the startup sequence. Case A describes a startup sequence that does not use the current-limiting feature and slowly turns on the MOS- FET by limiting the gate dv/dt. Case B uses the current- limiting feature and turns on the MOSFET as fast as possible while still preventing a high inrush current. Case A. Startup Without Current Regulation There are three ways to turn on the MOSFET without reaching the fast comparator current limit: 1) If the board capacitance is small, the inrush current is low. 2) If the gate capacitance is high, the MOSFET turns on slowly. 3) The fast comparator can be disabled (MAX4273 only). In all three cases, tON is determined only by the charge required to enhance the MOSFET. Effectively, the small gate-charging current limits the output voltage dv/dt. This time can be extended by connecting an external capacitor between GATE and GND (MAX4271/ MAX4272) (Figure 9) or between GATE and CEXT (MAX4273). The turn-on time is dominated by the exter- nal gate capacitance if this value is considerably higher than the MOSFET gate capacitance. Table 6 shows the timing required to enhance the recommended MOSFET with or without the external capacitor; Figure 3 shows the related waveforms and timing diagrams. (See Time to Charge Gate vs. CGATE and Startup Time with CBOARD = 0 in the Typical Operating Characteristics.) Remember that a high gate capacitance also increases the turn-off time (tOFF), except in the case of a MAX4273 fast fault. If an external gate capacitor is not used, RS is not nec- essary. RS prevents MOSFET self-oscillations that can occur when CGATE is high while CBOARD is low. Electrical characteristics as specified by the manufac- turer’s data sheet are: FDS6670A: CISS = 3200pF, QT(MAX) = 50nC, RDS(ON) = 8.2m Ω IRF7401: CISS = 1600pF, QT(MAX) = 48nC, RDS(ON) = 22m Ω MMSF5N03HD: CISS = 1200pF, QT(MAX) = 21nC, RDS(ON) = 40m Ω Figure 7. Fast Comparator Threshold vs. RTH 0 200 100 400 300 500 600 700 800 020 30 10 40 50 60 70 80 FAST COMPARATOR THRESHOLD VOLTAGE vs. RTH RTH (k Ω) RTH (k Ω) = VTH,FC (mV)/10 INDETERMINATE, NOT RECOMMENDED FOR RTH < 5k Ω DISABLED FOR RTH < 200 Ω *MAX4273 retry feature disabled by connecting CTIM to VIN. Table 5. Startup and Retry Timing Parameters tON tRETRY PART DEFAULT (µs) EXTERNALLY SET DEFAULT (µs) EXTERNALLY SET MAX4271 10 tON (ms) = 0.31 x CTIM (nF) No retry available MAX4272 10 tON (ms) = 0.31 x CTIM (nF) 320 tRETRY (ms) = 32 x tON = 10 x CTIM (nF) MAX4273* 10 tON (ms) = 0.31 x CTON (nF) 320 tRETRY (ms) =10 x CTIM (nF) |
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