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IRFE9230 датащи(PDF) 2 Page - International Rectifier |
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IRFE9230 датащи(HTML) 2 Page - International Rectifier |
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2 / 7 page ![]() IRFE9230 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 5.0 RthJ-PCB Junction to PC Board — — 19 Soldered to a copper clad PC board °C/W Source-DrainDiodeRatingsandCharacteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -4.0 ISM Pulse Source Current (Body Diode) — — -16 VSD Diode Forward Voltage — — -5.6 V Tj = 25°C, IS = -4.0A, VGS = 0V trr Reverse Recovery Time — — 400 ns Tj = 25°C, IF = -4.0A, di/dt ≤-100A/µs QRR Reverse Recovery Charge — — 4.0 µC VDD ≤ -50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.21 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.80 VGS = -10V, ID = -2.4A Resistance — — 1.68 VGS = -10V, ID = -4.0A VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.2 — — S VDS = -15V, IDS = -2.4A IDSS Zero Gate Voltage Drain Current — — -25 VDS= -160V, VGS = 0V — — -250 VDS = -160V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V Qg Total Gate Charge — — 35 VGS = -10V, ID = -4.0A Qgs Gate-to-Source Charge — — 6.1 nC VDS = -100V Qgd Gate-to-Drain (‘Miller’) Charge — — 21 td(on) Turn-On Delay Time — — 50 VDD = -100V, ID = -4.0A, tr Rise Time — — 100 RG = 7.5Ω td(off) Turn-Off Delay Time — — 80 tf Fall Time — — 80 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 700 VGS = 0V, VDS = -25V Coss Output Capacitance — 200 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 45 — nA nH ns µA Ω Measured from the center of drain pad to center of source pad Note: Corresponding Spice and Saber models are available on International Rectifier Website. |
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