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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF1405ZPBF.. датащи(PDF) 2 Page - International Rectifier |
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IRF1405ZPBF.. датащи(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRF1405Z/S/LPbF 2 www.irf.com S D G S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.7 4.9 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 88 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 120 180 Qgs Gate-to-Source Charge ––– 31 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 46 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 110 ––– td(off) Turn-Off Delay Time ––– 48 ––– ns tf Fall Time ––– 82 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 4780 ––– Coss Output Capacitance ––– 770 ––– Crss Reverse Transfer Capacitance ––– 410 ––– pF Coss Output Capacitance ––– 2730 ––– Coss Output Capacitance ––– 600 ––– Coss eff. Effective Output Capacitance ––– 910 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 (Body Diode) A ISM Pulsed Source Current ––– ––– 600 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 30 46 ns Qrr Reverse Recovery Charge ––– 30 45 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f VGS = 10V e VDD = 25V ID = 75A RG = 4.4 Ω TJ = 25°C, IS = 75A, VGS = 0V e TJ = 25°C, IF = 75A, VDD = 25V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 75A e VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = 25V, ID = 75A ID = 75A VDS = 44V Conditions VGS = 10V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 20V VGS = -20V Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.10mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. |
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