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MAX2601ESA датащи(PDF) 2 Page - Maxim Integrated Products

номер детали MAX2601ESA
подробное описание детали  3.6V, 1W RF Power Transistors for 900MHz Applications
PDF  6 Pages
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производитель  MAXIM [Maxim Integrated Products]
домашняя страница  https://www.maximintegrated.com/en.html
Logo MAXIM - Maxim Integrated Products

MAX2601ESA датащи(HTML) 2 Page - Maxim Integrated Products

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dBc
3.6V, 1W RF Power Transistors
for 900MHz Applications
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(TA = TMIN to TMAX, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Collector-Emitter Voltage, Shorted Base (VCES) ....................17V
Emitter Base Reverse Voltage (VEBO)...................................2.3V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (IC)........................................1200mA
Continuous Power Dissipation (TA = +70°C)
PSOPII (derate 80mW/°C above +70°C) (Note 1) ..........6.4W
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10sec) .............................+300°C
IC < 100µA
V
5.0
LVCEO
Collector-Emitter Sustaining
Voltage
V
15
BVCES
15
BVCEO
Collector-Emitter Breakdown
Voltage
100
hFE
DC Current Gain
µA
0.05
1.5
ICES
Collector Cutoff Current
pF
9.6
COB
Output Capacitance
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
Note 1: Backside slug must be properly soldered to ground plane (see
Slug Layout Techniques section).
IC = 200mA
Shorted base
Open base
IC = 250mA, VCE = 3V
VCE = 6V, VBE = 0V
VCB = 3V, IE = 0mA, f = 1MHz
CONDITIONS
dB
3.3
NF
Noise Figure
dBc
-25
IM5
Two-Tone IMR
-16
IM3
8:1
VSWR
Stability under Continuous
Load Mismatch Conditions
%
58
η
Collector Efficiency
dB
11.6
Power Gain
-42
2fo, 3fo
Harmonics
-43
mA
4.2
IB
Base Current
GHz
DC
1
f
Frequency Range
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
VBB = 0.9V
POUT = +30dBm total power, f1 = 835MHz,
f2 = 836MHz
VCC = 3.6V, POUT = 30dBm
VCC = 5.5V, all angles (Note 3)
(Note 2)
No modulation
POUT = 30dBm
CONDITIONS
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50Ω, POUT = 30dBm, f = 836MHz, TA = +25°C, unless oth-
erwise noted.)
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
V
15
BVCBO
Collector-Base Breakdown
Voltage
IC < 100µA, emitter open
VCC = 3.0V, POUT = 29dBm
dBc



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