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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N3773 датащи(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N3773 датащи(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page  Product Specification www.jmnic.com 2 Silicon NPN Power Transistors 2N3773 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 140 V VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=3.2A 4.0 V VBE Base-emitter on voltage IC=8A ; VCE=4V 2.2 V ICEO Collector cut-off current VCE=140V; IB=0 2.0 mA ICEX Collector cut-off current VCE=140V; VBE(off)=1.5V TC=150℃ 2.0 10.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 60 hFE-2 DC current gain IC=16A ; VCE=4V 5 Is/b Second breakdown collector current With base forward biased VCE=100Vdc,t=1.0s, Nonrepetitive 1.5 A THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ℃/W |
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