2

Absolute

Symbol

Parameter

Units

Maximum

V

4.5

Gate - Source Voltage

V

-4

Gate Drain Voltage

V

-4

Drain Current

mA

mW

580

RF Input Power

dBm

17

Channel Temperature

°C

160

Storage Temperature

°C

-65 to 160



jc

°C/W

165

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Source lead temperature is 25°C. Derate

3. Thermal resistance measured using 150°C

Liquid Crystal Measurement method.

Product Consistency Distribution Charts

OIP3 (dB)

Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.

LSL=18.5, Nominal=21.99, USL=26.0

18

26

Cpk = 1.59062

Stdev = 0.73 dBm

6 Wafers

Sample Size = 450

300

250

200

150

100

50

0

22

20

24

+3 Std

-3 Std

NF (dB)

Figure 3. NF @ 2 GHz, 2 V, 10 mA.

LSL=0, Nominal=0.44, USL=0.85

0.1

0.3

0.2

0.6

0.4

0.5

0.9

0.7 0.8

-3 Std

+3 Std

Cpk = 4.08938

Stdev = 0.03 dB

6 Wafers

Sample Size = 450

180

150

120

90

60

30

0

GAIN (dB)

Figure 4. Gain @ 2 GHz, 2 V, 10 mA.

LSL=15.0, Nominal=16.06, USL= 18.0

15

15.5

16

16.5

17

17.5

18

-3 Std

+3 Std

160

120

80

40

0

Cpk = 2.58097

Stdev = 0.14 dB

6 Wafers

Sample Size = 450

Note:

Distribution data sample size is 450 samples taken from 6 different

wafers. Future wafers allocated to this product may have nominal values

anywhere within the upper and lower spec limits. Measurements made

on production test board. This circuit represents a trade-off between

an optimal noise match and a realizeable match based on production

test requirements. Circuit losses have been de-embedded from actual

measurements.

01

2

3

4

5

250

200

150

100

50

0

0 V

–0.6 V

+0.6 V