AMMC-6431 datasheet(2/9 Pages) AVAGO

2 / 9 page

Table 1. Absolute Maximum Ratings[1,2,3,4, and 5]

Symbol

Parameters

Unit

Max

Notes

Vd-Vg

Drain to Gate Voltage

Positive Supply Voltage[2]

5.5

Gate Supply Voltage

-2.5 to 0.5

Drain Current[2]

1.1

2,3

Power Dissipation[2,3]

3.85

2,3

CW Input Power[2]

dBm

15.5

Tch

Operating Channel Temp.[4,5]

°C

+150

4,5

Tstg

Storage Case Temp.

°C

-65 to +150

Tmax

Maximum Assembly Temp (30 sec max)

°C

+300

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these limitations

will change to may signiﬁcantly reduce the lifetime of the device.

2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.

3. When operated at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is signiﬁcantly reduced.

4. These ratings apply to each individual FET.

5. The operating channel temperature will directly aﬀect the device MTTF. For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.

Table 2. DC Speciﬁcations/ Physical Properties[1]

Symbol

Parameters and Test Conditions

Units

Drain Supply Current (Vd = 5 V, Vg set for Id Typical)

650

Gate Supply Operating Voltage (Id(Q) = 650 (mA))

-1.0

Gate Supply Current (Vg = -1V set for Id Typical)

-0.10

θjc

Thermal Resistance[6] (Channel-to-Backside)

°C/W

16.8

Note:

1. Assume conductive epoxy attachment to an evaluation RF board at 85°C base plate temperatures.

Table 3. Thermal Properties

Parameter

Test Conditions

Value

Maximum Power Dissipation

Tbaseplate = 85°C

PD = 3.85W

Tchannel = 150°C

Thermal Resistance (

θjc)

Vd = 5V

Id = 650mA

PD = 3.25W

Tbaseplate = 85°C

θjc = 16.8°C/W

Tchannel = 139.6°C

Thermal Resistance (

θjc)

Under RF Drive

Vd = 5V

Id = 790mA

Pout = 24dBm

Pd = 3.7W

Tbaseplate = 85°C

θjc = 16.8°C/W

Tchannel = 147.14°C

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