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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLML0060PBF датащи(PDF) 2 Page - International Rectifier |
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IRLML0060PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLML0060TRPbF 2 www.irf.com Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C –––98116 ––– 78 92 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V IDSS ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.6 ––– gfs Forward Transconductance 7.6 ––– ––– S Qg Total Gate Charge ––– 2.5 ––– Qgs Gate-to-Source Charge ––– 0.7 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.3 ––– td(on) Turn-On Delay Time ––– 5.4 ––– tr Rise Time ––– 6.3 ––– td(off) Turn-Off Delay Time ––– 6.8 ––– tf Fall Time ––– 4.2 ––– Ciss Input Capacitance ––– 290 ––– Coss Output Capacitance ––– 37 ––– Crss Reverse Transfer Capacitance ––– 21 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 13 20 nC ––– ––– ––– ––– pF A 1.6 11 VDD = 30Vd nA nC ns VDS = VGS, ID = 25μA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C RDS(on) VGS = 10V, ID = 2.7A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current μA m Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 2.2A d MOSFET symbol showing the VDS =30V Conditions VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz RG = 6.8 VGS = 4.5V d di/dt = 100A/μs d VGS = 20V VGS = -20V TJ = 25°C, IS = 2.7A, VGS = 0V d integral reverse p-n junction diode. VDS = 25V, ID = 2.7A ID = 2.7A ID = 1.0A TJ = 25°C, VR = 30V, IF=1.6A |
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