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11/19/04

IRGS14C40LPbF

IRGSL14C40LPbF

IRGB14C40LPbF

Ignition IGBT

Page 1

IGBT with on-chip Gate-Emitter and Gate-Collector clamps

Features

Description

The advanced IGBT process family includes a

MOS gated, N-channel logic level device which

is intended for coil-on-plug automotive ignition

applications and small-engine ignition circuits.

Unique features include on-chip active voltage

clamps between the Gate-Emitter and

Gate-Collector which provide over voltage

protection capability in ignition circuits.

Collector

Emitter

Gate

TERMINAL DIAGRAM

NOTE: IRGS14C40L is available in tape and reel. Add a suffix of

TRR or TRL to the part number to determine the orientation of the

device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.

JEDEC TO-220AB

IRGB14C40L

JEDEC TO-262AA

IRGSL14C40L

JEDEC TO-263AB

IRGS14C40L

Absolute Maximum Ratings

Parameter

Max

Unit

Condition

Collector-to-Emitter Voltage

Clamped

V

Continuous Collector Current

20

A

Continuous Collector Current

14

A

Continuous Gate Current

1

mA

Peak Gate Current

10

Gate-to-Emitter Voltage

Clamped

V

Maximum Power Dissipation

125

W

54

W

Operating Junction and

- 40 to 175

°C

Storage Temperature Range

- 40 to 175

°C

Electrostatic Voltage

6

KV C = 100pF, R = 1.5K ohm

Self-clamped Inductive Switching Current

11.5

A

L = 4.7mH, T = 25°C

Thermal Resistance

Parameter

Min

Typ

Max

Unit

Thermal Resistance, Junction-to-Case

1.2

Thermal Resistance, Junction-to-Ambient

40

°C/W

(PCB Mounted, Steady State)

Transient Thermal Impedance, Juction-to-Case (Fig.11)

PD - 95193A